Hsinchu, Taiwan

Lawrance Hsu

This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lawrance Hsu. Retrieved from https://idiyas.com/inventor/lawrance-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2006

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2 patents (USPTO):Explore Patents

Title: Lawrance Hsu: Innovator in Semiconductor Technology

Introduction

Lawrance Hsu is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that focus on improving device performance and fabrication processes.

Latest Patents

One of his latest patents is titled "Process for removing organic materials during formation of a metal interconnect." This invention discloses a method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate. The process involves applying an ozone water solution with additives such as hydroxylamine or an ammonium salt, either as a spray or by immersion. A chelating agent may be included to protect the metal layer from oxidation. Additionally, a diketone can be added to the ozone water solution to remove any metal oxide that forms during treatment. This method effectively prevents changes in the dielectric constant and refractive index of the low k dielectric layer, thereby enhancing device performance.

Another significant patent by Hsu is the "Method to form a metal silicide gate device." This innovative method involves forming polysilicon lines over a substrate with a dielectric layer in between. A first isolation layer is created over the substrate and the sidewalls of the polysilicon lines, without covering the top surface of the lines. The polysilicon lines are partially etched, and a metal layer is deposited over them. A thermal anneal is then used to convert the polysilicon lines into metal silicide gates, completing the device after removing the unreacted metal layer.

Career Highlights

Lawrance Hsu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing the technology used in integrated circuits.

Collaborations

Hsu has collaborated with notable colleagues such as Bor-Wen Chan and Hun-Jan Tao, contributing to various projects that enhance semiconductor manufacturing processes.

Conclusion

Lawrance Hsu's innovative patents and contributions to semiconductor technology underscore his role as a key inventor in the field. His work continues to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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