Lauri Knuuttila

Title: Lauri Knuuttila: Innovator in Semiconductor Technology

Introduction

Lauri Knuuttila is a prominent inventor based in Villach, Austria. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device design.

Latest Patents

Knuuttila's latest patents include a Type III-V semiconductor device with a multi-layer barrier region. This semiconductor device features a barrier region and a channel region, along with source and drain electrodes. The gate structure is designed to control the conductive connection between the source and drain electrodes. Notably, the barrier region consists of a first barrier layer and a second barrier layer, with specific configurations that enhance device performance.

Another significant patent is the Type III-V semiconductor device with improved leakage. This device includes a semiconductor substrate with a barrier region and a channel layer that forms a heterojunction with the barrier region. The design allows for a two-dimensional charge carrier gas channel, optimizing the device's efficiency and functionality.

Career Highlights

Lauri Knuuttila is currently employed at Infineon Technologies Austria AG, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the capabilities of semiconductor devices, particularly in the area of III-V materials.

Collaborations

Knuuttila collaborates with talented colleagues, including Ingo Daumiller and Korbinian Reiser. Their combined expertise contributes to the innovative projects at Infineon Technologies, fostering a collaborative environment that drives technological advancements.

Conclusion

Lauri Knuuttila is a key figure in the semiconductor industry, with a focus on developing advanced devices that enhance performance and efficiency. His contributions through patents and collaboration with skilled professionals highlight his commitment to innovation in technology.