The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Aug. 27, 2021
Infineon Technologies Austria Ag, Villach, AT;
Korbinian Reiser, Ottobrunn, DE;
Ingo Daumiller, Oberaichwald, AT;
Lauri Knuuttila, Villach, AT;
Bhargav Pandya, Chandler, AZ (US);
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a barrier region and a channel region, source and drain electrodes, and a gate structure that is configured to control a conductive connection between the source and drain electrodes, wherein the barrier region comprises a first barrier layer and a second barrier layer, wherein in a central portion of the device the second barrier layer is the only layer that is disposed over the channel region, wherein in outer lateral portions of the device the first barrier layer is disposed over the channel region, wherein the first and second barrier layers are each III-V semiconductor alloys, and wherein a molar fraction of a second type III element in the central portion is higher than a molar fraction of the second type III element in the first barrier layer.