Korbinian Reiser

Title: Korbinian Reiser: Innovator in Semiconductor Technology

Introduction

Korbinian Reiser is a notable inventor based in Ottobrunn, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Korbinian Reiser holds a patent for a Type III-V semiconductor device with a multi-layer barrier region. This semiconductor device includes a barrier region and a channel region, along with source and drain electrodes. The gate structure is designed to control the conductive connection between the source and drain electrodes. The barrier region consists of a first barrier layer and a second barrier layer, with specific configurations that optimize the device's performance. The first and second barrier layers are each III-V semiconductor alloys, with varying molar fractions of a second type III element, enhancing the device's functionality. He has 1 patent to his name.

Career Highlights

Korbinian Reiser has built a successful career at Infineon Technologies Austria AG, where he has been instrumental in advancing semiconductor technologies. His expertise and innovative approach have positioned him as a key figure in the industry.

Collaborations

Throughout his career, Korbinian has collaborated with talented professionals, including Ingo Daumiller and Lauri Knuuttila. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Korbinian Reiser's contributions to semiconductor technology exemplify the impact of innovative thinking in the field. His patent and work at Infineon Technologies Austria AG highlight his commitment to advancing technology and improving device performance.