Company Filing History:
Years Active: 2017-2020
Title: Lark Liu: Innovator in Power MOSFET Technology
Introduction
Lark Liu is a prominent inventor based in Chengdu, China, known for his contributions to the field of semiconductor technology. With a total of 4 patents to his name, Liu has made significant advancements in power MOSFET design and functionality.
Latest Patents
Liu's latest patents include innovative methods for forming electronic devices. One notable patent is for a "Power MOSFET with a deep source contact," which describes a method involving the formation of closed loops over a semiconductor substrate. Each loop features a first and second polysilicon gate structure, with trench contacts that enhance device performance. Another significant patent is for a "Power MOSFET with metal filled deep source contact," which details a planar gate power MOSFET design that incorporates a trench with a refractory metal filler, optimizing the connection between the source and substrate.
Career Highlights
Lark Liu is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing more efficient and reliable power MOSFETs, which are crucial for various electronic applications.
Collaborations
Liu has collaborated with notable colleagues, including Furen Lin and Frank Alexander Baiocchi, contributing to a dynamic and innovative work environment.
Conclusion
Lark Liu's contributions to power MOSFET technology exemplify his commitment to innovation in the semiconductor industry. His patents reflect a deep understanding of electronic device design, positioning him as a key figure in advancing this critical technology.