Lanlin Wen

Title: The Innovative Contributions of Lanlin Wen

Introduction

Lanlin Wen is a prominent inventor based in Shanghai, China. He has made significant strides in the field of semiconductor technology, particularly in the detection of metal impurities in wafers. His innovative approach has garnered attention in the industry, showcasing his expertise and commitment to advancing technology.

Latest Patents

Lanlin Wen holds a patent for a detection method of metal impurity in wafers. The method involves conducting a medium temperature thermal treatment for a first predicted time period, followed by cooling the wafer and performing a low temperature thermal treatment for a second predicted time period. This process allows for the collection of metal impurities through vapor phase decomposition, followed by analysis using inductively coupled plasma mass spectrometry. This innovative method reduces time costs and enhances efficiency in detecting metal impurities.

Career Highlights

Lanlin Wen is currently employed at Zing Semiconductor Corporation, where he continues to contribute to advancements in semiconductor technology. His work focuses on improving detection methods that are crucial for the quality and reliability of semiconductor devices. His dedication to research and development has positioned him as a valuable asset in his field.

Collaborations

Lanlin has collaborated with notable colleagues such as Tian Feng and Zhen Zhou. Their combined expertise has fostered an environment of innovation and creativity, leading to significant advancements in their projects.

Conclusion

Lanlin Wen's contributions to the field of semiconductor technology, particularly through his patented detection method, highlight his role as an influential inventor. His work not only enhances the efficiency of detecting metal impurities but also sets a precedent for future innovations in the industry.