Company Filing History:
Years Active: 2020-2022
Title: Innovations of Lan Fang Yu in Three-Dimensional Memory Devices
Introduction
Lan Fang Yu is a notable inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional (3D) memory devices. With a total of 3 patents, his work has advanced the capabilities of memory storage solutions.
Latest Patents
Lan Fang Yu's latest patents focus on innovative methods for fabricating three-dimensional memory devices. One of his patents describes a method for forming a gate structure of a 3D memory device. This method involves creating an alternating dielectric stack on a substrate, which includes multiple dielectric layer pairs. The process includes forming a slit that penetrates the stack, removing certain dielectric layers to create horizontal trenches, and constructing gate structures within these trenches. Additionally, a spacer layer is formed to insulate the gate structures, enhancing the device's performance.
Another patent details a 3D NAND memory device that features an alternating stack of dielectric and conductive layers. This device includes a conductive wall that vertically penetrates the stack and a spacer layer that insulates the conductive wall from the alternating layers. The innovative design of the spacer layer, which consists of multiple sublayers with varying dielectric materials, optimizes the device's efficiency and functionality.
Career Highlights
Lan Fang Yu is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company has positioned him as a key player in the advancement of memory technology. His patents reflect a deep understanding of the complexities involved in 3D memory device fabrication.
Collaborations
Lan Fang Yu collaborates with talented individuals in his field, including Lei Ding and Jing Gao. Their combined expertise contributes to the innovative projects at Yangtze Memory Technologies Co., Ltd.
Conclusion
Lan Fang Yu's contributions to the field of three-dimensional memory devices demonstrate his innovative spirit and technical expertise. His patents not only advance memory technology but also pave the way for future developments in the industry.
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