Yangtze Memory Technologies Co., Ltd.

Lan Fang Yu

Bo Xu

Ping Yan

Jing Gao

Chuan Yang

Lei Ding

Sen Zhang

A method for forming a gate structure of a 3D memory device is provided. The method comprises: forming, on a substrate, an alternating dielectric stack including a plurality of dielectric layer pairs, each of the plurality of dielectric layer pairs comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer; forming a slit penetrating vertically through the alternating dielectric stack and extending in a horizontal direction; removing the plurality of second dielectric layers in the alternating dielectric stack through the slit to form a plurality of horizontal trenches; forming a gate structure in each of the plurality of horizontal trenches; forming a spacer layer on sidewalls of the slit to cover the gate structures, wherein the spacer layer has a laminated structure; and forming a conductive wall in the slit, wherein the conductive wall is insulated from the gate structures by the spacer layer.

Three-dimensional memory devices and fabricating methods thereof

A three-dimensional (3D) NAND memory device is provided. The device comprises an alternating stack including a plurality of dielectric/conductive layer pairs each comprising a dielectric layer and a conductive layer. The device further comprises a conductive wall vertically penetrating through the alternating stack and extending in a horizontal direction, and a spacer layer on sidewalls of the conductive wall configured to insulate the conductive wall from the conductive layers of the alternating stack. The spacer layer comprises a first spacer sublayer having a first dielectric material, a second spacer sublayer having a second dielectric material, and a third spacer sublayer having a third dielectric material. The second spacer is sandwiched between the first spacer sublayer and the third spacer sublayer. A second k-value of the second dielectric material is higher than a first k-value of the first dielectric material and higher than a third k-value of the third dielectric material.

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Hubei, China

Lan Fang Yu