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For the Inventor, By the Inventor

Aberdeen, NJ, United States of America

Lalita Manchanda

This inventor holds 9 USPTO granted patents and 1 published patent application. Top assignees: Agere Systems Inc., At+t Corp., Lucent Technologies Inc.. Active years: 1989-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lalita Manchanda. Retrieved from https://idiyas.com/inventor/lalita-manchanda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9 

% Patents Active = 77.8

Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 664(Granted Patents)


Location History:

  • North Plainfield, NJ (US) (1989 - 1991)
  • New Providence, NJ (US) (1994)
  • Aberdeen, NJ (US) (1995 - 2001)
  • Basking Ridge, NJ (US) (2000 - 2008)

Company Filing History:

goldMedal2 out of 2,316 
 
Agere Systems Inc.
 patents
silverMedal2 out of 4,208 
 
At+t Corp.
 patents
bronzeMedal2 out of 9,364 
 
Lucent Technologies Inc.
 patents
4. 1 out of 598 
 
Agere Systems Guardian Corp.
 patents
5. 1 out of 745 
 
American Telephone & Telegraph Co., At&t Bell Laboratories
 patents
6. 1 out of 3,345 
 
At&t Bell Laboratories
 patents

Years Active: 1989-2008

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9 patents (USPTO):Explore Patents
1. 7456064 - High K dielectric material and method of making a high K dielectric material (2008-11-25),
2. 6680130 - High K dielectric material and method of making a high K dielectric material (2004-01-20),
3. 6240199 - Electronic apparatus having improved scratch and mechanical resistance (2001-05-29),
4. 6124158 - Method of reducing carbon contamination of a thin dielectric film by (2000-09-26),
5. 5923056 - Electronic components with doped metal oxide dielectric materials and a (1999-07-13),
6. 5464783 - Oxynitride-dioxide composite gate dielectric process for MOS manufacture (1995-11-07),
7. 5373180 - Planar isolation technique for integrated circuits (1994-12-13),
8. 4996576 - Radiation-sensitive device (1991-02-26),
9. 4825278 - Radiation hardened semiconductor devices (1989-04-25),

Title: The Innovative Contributions of Lalita Manchanda

Introduction

Lalita Manchanda is a prominent inventor based in Aberdeen, NJ (US), known for her significant contributions to the field of materials science. With a total of nine patents to her name, she has made remarkable advancements in the development of dielectric materials.

Latest Patents

One of her latest patents is focused on high K dielectric materials and methods for their production. This dielectric material, which possesses a high dielectric constant, incorporates a Group III metal oxide along with a Group V element. The inclusion of the Group V element in the Group III metal oxide helps to minimize structural defects within the dielectric material. As a result, it effectively reduces both the fixed charge density and the conduction current of the dielectric material.

Career Highlights

Throughout her career, Lalita has worked with notable companies such as Lucent Technologies Inc. and AT&T Corp. Her experience in these organizations has allowed her to refine her expertise in materials science and innovation.

Collaborations

Lalita has collaborated with several professionals in her field, including William T. Lynch and Gary Robert Weber. These collaborations have contributed to her success and the advancement of her research.

Conclusion

Lalita Manchanda's innovative work in the development of high K dielectric materials showcases her expertise and dedication to advancing technology. Her contributions continue to impact the field of materials science significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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