Scottsdale, AZ, United States of America

Lalgudi M Sundaram

This inventor holds 6 USPTO granted patents. Top assignee: Motorola Corporation. Active years: 1989-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lalgudi M Sundaram. Retrieved from https://idiyas.com/inventor/lalgudi-m-sundaram

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.4

ph-index = 5

Forward Citations = 166(Granted Patents)


Company Filing History:


Years Active: 1989-1996

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6 patents (USPTO):Explore Patents

Title: Lalgudi M Sundaram: Innovator in Semiconductor Technology

Introduction

Lalgudi M Sundaram is a prominent inventor based in Scottsdale, AZ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His innovative work has paved the way for advancements in electronic devices and integrated circuits.

Latest Patents

One of his latest patents is a method for making a Schottky diode that is compatible with high-performance applications. This method involves creating a Schottky diode structure simultaneously with a polysilicon contact structure to a transistor. In a single process step, a polysilicon layer is patterned to expose a single crystal semiconductor region over one portion of a substrate, while leaving portions of the polysilicon layer intact over other portions of the substrate. Multi-layer metal electrodes are then deposited and patterned to form a rectifying Schottky contact to the exposed single crystal region and to form an ohmic contact to the exposed polysilicon.

Another notable patent is for forming a lateral bipolar transistor. This structure is formed in a laterally isolated semiconductor device tub of a first conductivity type. First and second trenches are etched in the device tub and filled with doped polysilicon of a second conductivity type to form an emitter and a collector. The portion of the tub between the emitter and collector regions forms a base region. This configuration provides a high emitter area and minimal device surface area, greatly easing the layout of integrated circuits using the transistor structure.

Career Highlights

Lalgudi M Sundaram has had a distinguished career at Motorola Corporation, where he has been instrumental in developing cutting-edge semiconductor technologies. His work has not only contributed to the company's success but has also influenced the broader electronics industry.

Collaborations

Throughout his career, Sundaram has collaborated with notable colleagues, including Neil T Tracht and Charles E Weitzel. These collaborations have fostered innovation and have led to the successful development of various technologies in the semiconductor field.

Conclusion

Lalgudi M Sundaram's contributions to semiconductor technology through his patents and work at Motorola Corporation highlight his role as a key innovator in the industry. His advancements continue to impact the development of electronic devices and integrated circuits.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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