The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1989
Filed:
Apr. 21, 1988
Applicant:
Inventors:
Charles E Weitzel, Tempe, AZ (US);
Lalgudi M Sundaram, Scottsdale, AZ (US);
Steven C Lazar, Jr, Plano, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ;
Abstract
A dual-gate gallium arsenide power MESFET chip comprising a source region surrounded by a first gate, a second surrounding the first gate, a drain region juxtaposed to said second gate, and a shorting bar which couples the second gate to the source region. This combination, used in a multi-fingered application, provides a reverse breakdown voltage substantially higher than prior art devices.
Weitzel, Charles. (1989). Dual-gate gallium arsenide power metal semiconductor field effect (U.S. Patent No. 4870478). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4870478
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile