Fengshan, Taiwan

Lai-Ching Lin


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Kaohsiung Hsien, TW (2002)
  • Fengshan, TW (2003)

Company Filing History:


Years Active: 2002-2003

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2 patents (USPTO):Explore Patents

Title: Innovations of Lai-Ching Lin

Introduction

Lai-Ching Lin is a notable inventor based in Fengshan, Taiwan. He has made significant contributions to the field of semiconductor memory technology. With a total of 2 patents to his name, his work has garnered attention in the industry.

Latest Patents

One of Lai-Ching Lin's latest patents is for a flat-cell nonvolatile semiconductor memory. This innovative memory includes a plurality of units, each comprising word lines, a main bit line, a ground line, sub-bit lines, memory cell columns, and bank-selecting switches. The design allows for efficient data storage and retrieval, with word lines arranged in parallel and various bank-selecting switches controlling the memory cell columns.

Another significant patent is the double protection virtual ground memory circuit and column decoder. This invention introduces a double protection circuit that reduces leakage current from the virtual ground memory. As a result, the power consumed by the memory circuit is lowered, and the sensing range of data within the memory is improved by a sense amplifier.

Career Highlights

Lai-Ching Lin is currently employed at Macronix International Co., Ltd., where he continues to develop cutting-edge memory technologies. His work has been instrumental in advancing the capabilities of semiconductor memory systems.

Collaborations

Lai-Ching Lin has collaborated with talented coworkers, including Yu-Wei Lee and Sheau-Yung Shyu, who contribute to the innovative environment at Macronix International Co., Ltd.

Conclusion

Lai-Ching Lin's contributions to semiconductor memory technology through his patents reflect his expertise and dedication to innovation. His work continues to influence the industry and pave the way for future advancements.

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