Company Filing History:
Years Active: 2001
Title: L Y Chen: Innovator in Semiconductor Technology
Introduction
L Y Chen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to gate formation methods. His work is instrumental in advancing the efficiency and effectiveness of semiconductor devices.
Latest Patents
L Y Chen holds a patent titled "Method for forming gate." This patent describes a comprehensive process for forming a gate on a substrate. The method involves the sequential formation of a gate oxide layer, a polysilicon layer, and a barrier layer. A conductive layer is then created on the barrier layer through sputtering deposition using titanium silicide with a low silicon content as a target. A rapid thermal process is employed to eliminate any polymer nodules formed during sputtering deposition. An anti-reflection layer is subsequently formed on the conductive layer. The anti-reflection layer, conductive layer, and barrier layer are patterned using an etchant composed of chlorine, nitrogen, and hexafluoroethane until the polysilicon layer is exposed. Finally, the exposed polysilicon layer and the underlying gate oxide layer are removed using an etchant composed of chlorine, hydrogen bromide, helium, and oxygen, resulting in the formation of a gate.
Career Highlights
L Y Chen is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to contribute to various advancements in semiconductor technology. His innovative approach and technical expertise have positioned him as a key player in the field.
Collaborations
L Y Chen has collaborated with notable colleagues, including Heinz Shih and Wen-Yi Hsieh. These collaborations have fostered a productive environment for innovation and have led to significant advancements in their respective projects.
Conclusion
L Y Chen's contributions to semiconductor technology through his patent on gate formation methods exemplify his innovative spirit and technical prowess. His work continues to influence the industry and pave the way for future advancements in semiconductor devices.