Iksan, South Korea

Kyusang Ahn

This inventor holds 1 USPTO granted patent. Top assignees: Dongwoo Fine-Chem, Samsung Electronics Ltd.. Active years: 2026.


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kyusang Ahn - Innovator in Etchant Composition

Introduction

Kyusang Ahn is an inventor based in Iksan-si, South Korea. He has made contributions to the field of etching compositions, particularly for silicon and silicon germanium. His innovative approach focuses on developing effective etchant compositions that can enhance the etching process.

Latest Patent Applications

Kyusang Ahn's notable patent application is titled "ETCHANT COMPOSITION FOR ETCHING SILICON AND SILICON GERMANIUM, AND PREPARATION METHOD OF PATTERN USING THE SAME." This application describes an etchant composition that includes an oxidizing agent, a fluorine-based compound, a surfactant represented by specific chemical formulas, and water. The surfactant is included in an amount ranging from 5% to 40% by weight based on the total weight of the etchant composition. This innovative formulation aims to improve the efficiency and effectiveness of etching processes in semiconductor manufacturing.

Conclusion

Kyusang Ahn's work in developing etchant compositions showcases his commitment to advancing technology in the semiconductor industry. His contributions, although not yet resulting in granted patents, reflect a significant potential for innovation in this field.

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