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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Kyunghwa Yun

USPTO Granted Patents = 15 

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 24(Granted Patents)


Location History:

  • Hwaseong-si, KR (2020 - 2023)
  • Suwon-si, KR (2021 - 2024)

Company Filing History:

goldMedal15 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2020-2025

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15 patents (USPTO):Explore Patents
1. 12336178 - Nonvolatile memory device (2025-06-17),
2. 11875855 - Non-volatile memory device including signal lines arranged at the same level as a common source line and a gate arranged at the same level as a ground selection line (2024-01-16),
3. 11723208 - Memory device (2023-08-08),
4. 11430806 - Nonvolatile memory device (2022-08-30),
5. 11430804 - Vertical memory devices (2022-08-30),
6. 11355194 - Non-volatile memory device (2022-06-07),
7. 11348910 - Non-volatile memory device (2022-05-31),
8. 11302396 - Memory device (2022-04-12),
9. 11289500 - Memory device (2022-03-29),
10. 11289467 - Memory device (2022-03-29),
11. 11282827 - Nonvolatile memory device having stacked structure with spaced apart conductive layers (2022-03-22),
12. 11211391 - Memory device (2021-12-28),
13. 11189634 - Non-volatile memory device including vertical pass transistors having a greater width in an area between a gate and a word line than a width of a channel structure in an area between a ground select line and the word line (2021-11-30),
14. 11087844 - Non-volatile memory device (2021-08-10),
15. 10763278 - Semiconductor memory device (2020-09-01),

Title: Kyunghwa Yun: Innovator in Nonvolatile Memory Technology

Introduction

Kyunghwa Yun is a prominent inventor based in Hwaseong-si, South Korea. She has made significant contributions to the field of nonvolatile memory devices, holding a total of 15 patents. Her work has been instrumental in advancing memory technology, particularly in the design and functionality of memory devices.

Latest Patents

Among her latest patents, one notable invention is a nonvolatile memory device that includes a peripheral circuit with a first active region and a memory block featuring a second active region. This memory block incorporates a vertical structure consisting of pairs of a first insulating layer and a first conductive layer, along with a second insulating layer and multiple conductive layers. The design allows for efficient connectivity through a first through via that penetrates the vertical structure, enhancing the device's performance. Another significant patent involves a memory device that features a memory cell array in a first semiconductor layer, where the array includes multiple wordlines and pass transistors arranged to optimize signal line levels.

Career Highlights

Kyunghwa Yun is currently employed at Samsung Electronics Co., Ltd., where she continues to innovate in the field of memory technology. Her expertise and dedication have positioned her as a key player in the development of advanced memory solutions.

Collaborations

Throughout her career, Kyunghwa has collaborated with talented individuals such as Chanho Kim and Dongku Kang. These partnerships have fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

Kyunghwa Yun's contributions to nonvolatile memory devices exemplify her innovative spirit and technical expertise. Her patents reflect a commitment to enhancing memory technology, making her a significant figure in the industry.

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