The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Mar. 04, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A vertical memory device is provided. The vertical memory device includes gate electrodes formed on a substrate and spaced apart from each other in a first direction substantially perpendicular to an upper surface of the substrate, the gate electrodes including a first gate electrode and a second gate electrode that is interposed between the first gate electrode and the substrate; a channel extending through the gate electrodes in the first direction; an insulating isolation pattern extending through the first gate electrode in the first direction, and spaced apart from the first gate electrode in a second direction substantially parallel to the upper surface of the substrate; and a blocking pattern disposed on an upper surface, a lower surface and a sidewall of each of the gate electrodes, the sidewall of the gate electrodes facing the channel. The insulating isolation pattern directly contacts the first gate electrode.