Company Filing History:

28 out of 6,228

Hynix Semiconductor Inc.

Years Active: 2006-2019

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36 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10204665 - Memory device with interleaved bank access (2019-02-12),

2. 9940982 - Memory device having bank interleaving access (2018-04-10),

3. 9851401 - Stacked memory device and semiconductor memory system including the same (2017-12-26),

4. 9552255 - Memory device with parallel odd and even column access and methods thereof (2017-01-24),

5. 9472260 - Semiconductor memory device (2016-10-18),

6. 9311974 - Input/output strobe pulse control circuit and semiconductor memory device including the same (2016-04-12),

7. 8922273 - Internal voltage generator (2014-12-30),

8. 8559245 - Internal voltage generating circuit having selectively driven drivers in semiconductor memory apparatus (2013-10-15),

9. 8531897 - Delay control circuit and semiconductor memory device including the same (2013-09-10),

10. 8392741 - Latency control circuit and semiconductor memory device including the same (2013-03-05),

11. 8350613 - Signal delay circuit, clock transfer control circuit and semiconductor device having the same (2013-01-08),

12. 8320197 - Semiconductor memory device (2012-11-27),

13. 8248129 - Signal delay circuit, clock transfer control circuit and semiconductor device having the same (2012-08-21),

14. 8050118 - Semiconductor memory device (2011-11-01),

15. 8044679 - On-die termination control circuit of semiconductor memory device (2011-10-25),

Title: Kyung-Whan Kim: A Pioneer in Memory Device Innovations

Introduction:

Kyung-Whan Kim, located in Kyoungki-do, South Korea, is a distinguished inventor with a remarkable portfolio of 36 patents. His expertise lies primarily in the development of advanced memory devices, showcasing his significant contributions to the field of technology.

Latest Patents:

Among his latest innovations are two noteworthy patents that highlight his focus on memory device architecture. The first, titled "Memory device with interleaved bank access," describes a sophisticated memory device comprising multiple bank groups, a first and second bus, and a toggle signal generation unit. This arrangement enhances the efficiency of read and write command signal transmission through the buses.

The second invention, "Memory device having bank interleaving access," shares a similar design, incorporating a multitude of bank groups and buses paired with a toggle signal generation unit. This innovation further refines the process of transmitting column address signals, thereby optimizing memory device performance.

Career Highlights:

Throughout his career, Kyung-Whan Kim has significantly impacted the semiconductor industry through his work with prominent companies such as Hynix Semiconductor Inc. and Skhynix Inc. His efforts have been instrumental in pushing the boundaries of memory technology and improving data access speeds.

Collaborations:

During his tenure in the industry, Kim has collaborated with notable professionals, including Jae-Jin Lee and Seok-Cheol Yoon. Together, they have contributed to the development of pioneering memory technologies, reinforcing the importance of teamwork in innovation.

Conclusion:

Kyung-Whan Kim’s contributions to memory device technology exemplify the spirit of innovation. With a solid track record of patents and collaborations, he continues to advance the field, leaving an enduring legacy in the realm of semiconductor design. As technology evolves, his work will undoubtedly inspire future advancements in memory devices.

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