Suwon, South Korea

Kyung Han Ahn

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kyung Han Ahn. Retrieved from https://idiyas.com/inventor/kyung-han-ahn-6wt07shd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Innovations by Kyung Han Ahn in Electronic Components

Introduction

Kyung Han Ahn is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of electronic components, particularly through his innovative methods of manufacturing.

Latest Patents

Kyung Han Ahn holds a patent for a method of manufacturing an electronic component. This method focuses on creating components with high inductance (L) and excellent quality (Q) factor, along with direct current (DC)-bias characteristics. The process involves forming a magnetic body that embeds internal coil parts and includes a cover part made of a magnetic metal plate on at least one of the upper or lower portions of the magnetic body.

Career Highlights

Ahn is currently employed at Samsung Electro-Mechanics Co., Ltd., where he continues to develop cutting-edge technologies in electronic components. His work has been instrumental in advancing the quality and efficiency of electronic devices.

Collaborations

Some of his notable coworkers include Moon Soo Park and Jong Sik Yoon, who contribute to the innovative environment at Samsung Electro-Mechanics Co., Ltd.

Conclusion

Kyung Han Ahn's contributions to the field of electronic components exemplify the importance of innovation in technology. His patented methods are paving the way for advancements in electronic manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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