Daejeon, South Korea

Kyuhwan Shim


Average Co-Inventor Count = 9.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1993-1994

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2 patents (USPTO):Explore Patents

Title: Innovations of Kyuhwan Shim in GaAs Semiconductor Technology

Introduction

Kyuhwan Shim is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Arsenide (GaAs) metal semiconductor field-effect transistors (FETs). With a total of 2 patents, his work has advanced the manufacturing methods of these critical electronic components.

Latest Patents

Kyuhwan Shim's latest patents include a manufacturing method of GaAs metal semiconductor FET. This method involves several steps, such as preparing a GaAs substrate, depositing a silicon layer, and forming photoresist patterns to define contact regions and channel regions. The process also includes injecting silicon ions and annealing the substrate to activate these ions, ultimately forming ohmic contacts and a gate electrode.

Another notable patent is the manufacturing method of a self-aligned GaAs FET using a refractory gate with a dual structure. This innovative method outlines the steps of defining an active region, ion-implanting impurities, and forming a gate with low-resistance and improved Schottky characteristics. These advancements are crucial for enhancing the performance of GaAs FETs in various applications.

Career Highlights

Kyuhwan Shim is affiliated with the Electronics and Telecommunications Research Institute, where he continues to push the boundaries of semiconductor technology. His work has not only contributed to the advancement of GaAs FETs but has also positioned him as a key figure in the research community.

Collaborations

Some of his notable coworkers include Chulsoon Park and Dojin Kim, who have collaborated with him on various projects related to semiconductor innovations.

Conclusion

Kyuhwan Shim's contributions to GaAs semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced electronic components, paving the way for future innovations.

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