Kyongwon An

Title: Innovations of Kyongwon An in Vertical Memory Devices

Introduction

Kyongwon An is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, particularly in the development of vertical memory technologies. With a total of two patents to his name, An's work is recognized for its innovative approaches to memory device manufacturing.

Latest Patents

Kyongwon An's latest patents focus on vertical memory devices and methods of manufacturing them. These devices include a channel that extends vertically on a substrate, featuring a charge storage structure on the outer sidewall of the channel. This structure consists of a tunnel insulation pattern, a charge trapping pattern, and a first blocking pattern, all stacked sequentially in a horizontal direction. The design incorporates gate electrodes that are spaced apart in the vertical direction, surrounding the charge storage structure. Each charge trapping pattern faces one of the gate electrodes horizontally. Notably, the vertical length of the inner sidewall of each charge trapping pattern, which faces the tunnel insulation pattern, is shorter than that of the outer sidewall facing the first blocking pattern.

Career Highlights

Kyongwon An is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of memory technology, contributing to advancements that are crucial for modern electronic devices.

Collaborations

Throughout his career, Kyongwon An has collaborated with talented individuals such as Bio Kim and Yujin Kim. These collaborations have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies in the field of memory devices.

Conclusion

Kyongwon An's contributions to vertical memory devices exemplify the innovative spirit of modern technology. His patents reflect a deep understanding of memory architecture and manufacturing processes, positioning him as a key figure in the advancement of memory technology.