The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Apr. 14, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Bio Kim, Seoul, KR;
Yujin Kim, Suwon-si, KR;
Philouk Nam, Suwon-si, KR;
Youngseon Son, Hwaseong-si, KR;
Kyongwon An, Seoul, KR;
Jumi Yun, Pocheon-si, KR;
Woojin Jang, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A vertical memory device includes a channel extending in a vertical direction on a substrate, a charge storage structure on an outer sidewall of the channel and including a tunnel insulation pattern, a charge trapping pattern, and a first blocking pattern sequentially stacked in a horizontal direction, and gate electrodes spaced apart from each other in the vertical direction, each of which surrounds the charge storage structure. The charge storage structure includes charge trapping patterns, each of which faces one of the gate electrodes in the horizontal direction. A length in the vertical direction of an inner sidewall of each of the charge trapping patterns facing the tunnel insulation pattern is less than a length in the vertical direction of an outer sidewall thereof facing the first blocking pattern.