Kwok K Ng

Title: Kwok K Ng: Innovator in III-V Power Field Effect Transistors

Introduction

Kwok K Ng is a prominent inventor based in Warren, NJ (US). He holds a total of 7 patents that showcase his expertise in the field of power electronics. His innovative work primarily focuses on the development of advanced field effect transistors.

Latest Patents

One of his latest patents involves III-V power field effect transistors. This invention is configured for use in high power applications and includes a method for its fabrication. The field effect transistor is formed of III-V materials and is designed to have a breakdown voltage that is advantageous for high power applications. The configuration process begins by determining the operating voltage and the desired breakdown voltage. A peak electric field associated with these parameters is identified, and the device is configured to exhibit this peak electric field at the operating voltage. The design incorporates features such as an overlapping gate or field plate, along with a barrier layer over the device channel, or a p-type pocket formed in a region of single-crystal III-V material beneath the device channel. These features extend into the drift region of the device, effectively controlling the electrical potential in a manner that meets the desired specifications.

Career Highlights

Throughout his career, Kwok K Ng has worked with notable companies such as Lucent Technologies Inc. and Agere Systems Inc. His contributions to the field of electronics have been significant, particularly in the area of high power applications.

Collaborations

He has collaborated with esteemed colleagues, including Clifford Alan King and Michel Ranjit Frei, which has further enriched his professional journey.

Conclusion

Kwok K Ng's innovative contributions to the field of III-V power field effect transistors highlight his role as a leading inventor in high power electronics. His work continues to influence advancements in this critical area of technology.