The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Jan. 12, 2001
Applicant:
Inventors:
Michel Ranjit Frei, Berkeley Heights, NJ (US);
Clifford Alan King, New York, NY (US);
Yi Ma, Orlando, FL (US);
Marco Mastrapasqua, Annandale, NJ (US);
Kwok K Ng, Warren, NJ (US);
Assignee:
Agere Systems Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ; H01L 3/10328 ; H01L 2/7082 ;
U.S. Cl.
CPC ...
H01L 2/1331 ; H01L 3/10328 ; H01L 2/7082 ;
Abstract
A heterojunction bipolar transistor includes an emitter or collector region of doped silicon, a base region including silicon-germanium, and a spacer. The emitter or collector region form a heterojunction with the base region. The spacer is positioned to electrically insulate the emitter or collector region from an external region. The spacer includes a silicon dioxide layer physically interposed between the emitter or collector region and the remainder of the spacer.