Gyeonggi-do, South Korea

Kwang-Sook Noh


Average Co-Inventor Count = 1.8

ph-index = 5

Forward Citations = 73(Granted Patents)


Location History:

  • Kyungki-do, KR (2003 - 2009)
  • Gyeonggi-do, KR (2007 - 2013)
  • Hwaseong-si, KR (2012 - 2015)

Company Filing History:


Years Active: 2003-2015

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9 patents (USPTO):Explore Patents

Title: Kwang-Sook Noh: Innovator in Semiconductor Memory Technology

Introduction

Kwang-Sook Noh is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor memory technology, holding a total of 9 patents. His work focuses on enhancing the performance and efficiency of memory devices, which are crucial in modern computing.

Latest Patents

Among his latest patents, Noh has developed a semiconductor memory device that performs a refresh operation. This device includes a memory cell array and a refresh control circuit. The refresh circuit is designed to execute a second burst refresh operation on memory cell rows after they exit from a self-refresh operation, depending on a comparison between the entering time for the self-refresh operation and a reference time. Additionally, he has patented methods for operating DRAM devices with adjustable internal refresh cycles that respond to on-chip temperature changes. This integrated circuit memory device features a refresh control circuit that generates an internal memory refresh command signal, which can change its period based on the temperature of the memory device.

Career Highlights

Kwang-Sook Noh is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His innovative work has positioned him as a key figure in the development of advanced memory solutions.

Collaborations

Noh has collaborated with notable coworkers, including Jong-hyun Choi and Young-Hun Seo, who share his commitment to advancing semiconductor technology.

Conclusion

Kwang-Sook Noh's contributions to semiconductor memory technology exemplify his dedication to innovation in the field. His patents reflect a deep understanding of memory systems and their operational efficiencies. His work continues to influence the development of next-generation memory devices.

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