The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Feb. 20, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jae-Youn Youn, Seoul, KR;

So-Young Kim, Hwaseong-si, KR;

Kwang-Sook Noh, Hwaseong-si, KR;

Sang-Jae Rhee, Seongnam-si, KR;

Hyun-Chul Yoon, Yongin-si, KR;

Yoon-Jae Lee, Seoul, KR;

Jung-Bae Lee, Seongnam-si, KR;

Joo-Sun Choi, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/406 (2006.01); G11C 8/18 (2006.01); G06F 11/10 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40626 (2013.01); G11C 8/18 (2013.01); G06F 11/106 (2013.01); G11C 11/22 (2013.01);
Abstract

A semiconductor memory device includes a memory cell array and a refresh control circuit. The refresh circuit is configured to: perform a second burst refresh operation on the memory cell rows after the memory cell rows exit from a self refresh operation, and not perform the second burst refresh operation on the memory cell rows after the memory cell rows exit from a self refresh operation. Whether the refresh control circuit performs or does not perform the second burst refresh operation is based on a comparison between an entering time for the self refresh operation of the memory cell rows and a reference time.


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