Gyeonggi-do, South Korea

Kwan Woo Do

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Skhynix Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kwan Woo Do. Retrieved from https://idiyas.com/inventor/kwan-woo-do-mwlxzxuh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Kwan Woo Do: Innovator in Semiconductor Technology

Introduction

Kwan Woo Do is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on improving the efficiency and reliability of semiconductor devices.

Latest Patents

Kwan Woo Do holds a patent for a semiconductor device and method for fabricating the same. This invention aims to enhance current leakage properties in semiconductor devices. The patent describes a capacitor that includes a lower electrode, a dielectric layer, and an upper electrode. Notably, the upper electrode features a conductive carbon-containing layer, with a carbon content ranging from more than 5 at % to equal to or less than 10 at %.

Career Highlights

Kwan Woo Do is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His role involves research and development, where he applies his expertise to advance semiconductor technologies. His innovative approach has positioned him as a valuable asset to his team and the company.

Collaborations

Kwan Woo Do collaborates with talented colleagues, including Wan Joo Maeng and Jeong Yeop Lee. Together, they work on various projects aimed at pushing the boundaries of semiconductor technology.

Conclusion

Kwan Woo Do's contributions to semiconductor technology through his patent demonstrate his commitment to innovation in the field. His work not only enhances device performance but also reflects the ongoing advancements in semiconductor research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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