The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Nov. 02, 2021
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Kwan Woo Do, Gyeonggi-do, KR;
Wan Joo Maeng, Gyeonggi-do, KR;
Jeong Yeop Lee, Gyeonggi-do, KR;
Ki Vin Im, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/10 (2006.01); H01G 4/008 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01G 4/008 (2013.01); H01G 4/10 (2013.01);
Abstract
Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.