Garland, TX, United States of America

Kuo Yao Lin

This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 2026.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Kuo Yao Lin - Innovator in Electrostatic Discharge Protection Circuits

Introduction

Kuo Yao Lin is a notable inventor based in Garland, Texas. He has made significant contributions to the field of integrated circuits, particularly in the area of electrostatic discharge (ESD) protection. His innovative work has implications for enhancing the reliability and performance of electronic devices.

Latest Patents

Kuo Yao Lin holds a patent for an electrostatic discharge (ESD) protection circuit. This patent describes an integrated circuit that includes a transistor, a doped buried layer, and a capacitor. The design features a transistor with source and drain regions, which are disposed in a semiconductor layer of opposite conductivity type. The doped buried layer is strategically placed below the source and drain regions, while the capacitor is integrated into the semiconductor layer, enhancing the circuit's ESD protection capabilities.

Career Highlights

Kuo Yao Lin is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to focus on developing advanced technologies that improve electronic device performance and durability.

Collaborations

Kuo Yao Lin collaborates with Akram Ali Salman, a fellow innovator in the field. Their partnership exemplifies the collaborative spirit that drives innovation in technology.

Conclusion

Kuo Yao Lin's contributions to electrostatic discharge protection circuits highlight his role as a key inventor in the semiconductor industry. His work not only advances technology but also ensures the reliability of electronic devices in various applications.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…