Hsinchu, Taiwan

Kuo-Hsin Lai

This inventor holds 28 USPTO granted patents and 4 published patent applications, primarily in Memory Control Circuits. Top assignees: Phison Electronics Corporation, Industrial Technology Research Institute. Active years: 2009-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuo-Hsin Lai. Retrieved from https://idiyas.com/inventor/kuo-hsin-lai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 28 

% Patents Active = 96.4

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 113(Granted Patents)


Location History:

  • Hsinchu, TW (2009 - 2020)
  • Hsinchu County, TW (2012 - 2020)

Company Filing History:


Years Active: 2009-2020

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Areas of Expertise:
Decoding Method
Memory Storage Device
Memory Control Circuit
Data Processing
Error Processing
Data Reading
Data Programming
Data Managing
Non-Volatile Memory
Voltage Compensation
Threshold Voltage
Error Correction
28 patents (USPTO):Explore Patents

Title: Spotlight on Inventor Kuo-Hsin Lai: A Pioneer in Memory Storage Technology

Introduction:

Kuo-Hsin Lai, a distinguished inventor hailing from Hsinchu County, Taiwan, has made significant contributions to the field of memory storage technology. With an impressive portfolio of 28 patents, Lai's innovative work has revolutionized the decoding methods, memory control circuit units, and memory storage devices.

Latest Patents:

Lai's recent patents showcase his expertise in the development of cutting-edge technologies. His inventions include a novel decoding method, memory control circuit unit, and memory storage device. The decoding method involves configuring read voltage categories, executing decoding operations, and dynamically adjusting parameters to enhance performance and efficiency.

Career Highlights:

Throughout his career, Kuo-Hsin Lai has been associated with renowned companies such as Phison Electronics Corporation and the Industrial Technology Research Institute. His role in these organizations has been instrumental in driving research and development initiatives in the memory storage industry, leading to groundbreaking innovations.

Collaborations:

Lai has collaborated with talented individuals in his field, including notable coworkers like Wei Hung Lin and Yu-Hsiang Lin. Together, they have worked on projects aimed at pushing the boundaries of memory storage technology and shaping the future of the industry.

Conclusion:

In conclusion, Kuo-Hsin Lai stands out as a visionary inventor who continues to push the envelope in memory storage technology. His dedication to innovation, coupled with his collaborative spirit, has cemented his position as a pioneer in the field. With a remarkable track record of patents and a passion for technological advancement, Lai's contributions are set to make a lasting impact on the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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