The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Jan. 31, 2018
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Yu-Hsiang Lin, Yunlin, TW;

Shao-Wei Yen, Kaohsiung, TW;

Cheng-Che Yang, New Taipei, TW;

Kuo-Hsin Lai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); H03M 13/37 (2006.01); H03M 13/45 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G11C 29/52 (2013.01); H03M 13/3746 (2013.01); H03M 13/458 (2013.01);
Abstract

A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity check operation on the codeword by an error checking and correcting circuit to generate a syndrome sum corresponding to the codeword; and dynamically adjusting a first parameter used by the error checking and correcting circuit in a first decoding operation based on whether the syndrome sum is less than a first threshold value and performing the first decoding operation on the codeword by the error checking and correcting circuit by using the first parameter.


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