Kuo Cheng-Cheng

Title: Kuo Cheng-Cheng: Innovator in Semiconductor Fabrication

Introduction

Kuo Cheng-Cheng is a notable inventor based in Baoshan, China. He has made significant contributions to the field of semiconductor device fabrication. His innovative methods have paved the way for advancements in technology.

Latest Patents

Kuo Cheng-Cheng holds a patent for a "Method of fabricating a dummy gate structure in a gate last process." This patent describes a method that includes forming a plurality of gate structures in a first portion of a substrate, where these structures have a first height. A first metal gate structure is then formed in a second portion of the substrate, surrounded by an isolation region. Additionally, a plurality of dummy gate structures is created in the second portion, configured in a ring formation encircling the metal gate structure and the isolation region. The dummy structures have a top surface that is substantially planar with the gate structures and covers at least 5% of the pattern density of the second portion of the substrate. Kuo Cheng-Cheng has 1 patent to his name.

Career Highlights

Throughout his career, Kuo Cheng-Cheng has demonstrated a strong commitment to innovation in semiconductor technology. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor fabrication processes.

Collaborations

Kuo Cheng-Cheng has collaborated with talented individuals such as Su-Chen Lai and Ming-Yuan Wu. These partnerships have contributed to the success of his projects and the advancement of their shared goals in the field.

Conclusion

Kuo Cheng-Cheng is a distinguished inventor whose work in semiconductor fabrication has made a lasting impact. His innovative methods and collaborations continue to influence the industry positively.