Kuo-Cheng Chang

Title: Honoring the Innovations of Kuo-Cheng Chang in Semiconductor Technology

Introduction: Kuo-Cheng Chang is a prominent inventor based in New Taipei, Taiwan, whose contributions to semiconductor technology have led to the development of two significant patents. His work focuses on enhancing the efficiency and performance of lateral double diffused metal oxide semiconductor (LDMOS) devices, which are critical in various electronic applications.

Latest Patents: Kuo-Cheng Chang's latest patents include a comprehensive invention based on the lateral double diffused metal oxide semiconductor device and its manufacturing method. This innovative device consists of several essential components, including a drift region, an isolation oxide region, and two oxide regions of differing thicknesses. The design allows for reduced conduction resistance while maintaining the breakdown voltage, a crucial factor in ensuring reliability and performance in semiconductor applications.

Career Highlights: Throughout his career, Kuo-Cheng has proven himself as a valuable asset in the field of semiconductor engineering. His work at Richtek Technology Corporation has been pivotal in advancing the company's technological capabilities and has played a vital role in developing state-of-the-art solutions for the semiconductor industry.

Collaborations: Kuo-Cheng Chang collaborates closely with notable colleagues, including Tsung-Yi Huang and Ching-Yao Yang. These partnerships foster a productive exchange of ideas and drive innovation within Richtek Technology Corporation.

Conclusion: Kuo-Cheng Chang's inventive contributions to the semiconductor industry underscore his role as a forward-thinking inventor. His patents not only reflect his technical expertise but also pave the way for future advancements in LDMOS technology, marking him as a significant figure in the world of innovations.