The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Feb. 08, 2016
Tsung-yi Huang, Hsinchu, TW;
Ching-yao Yang, Changhua, TW;
Wen-yi Liao, Hsinchu, TW;
Hung-der Su, Pingzhen, TW;
Kuo-cheng Chang, New Taipei, TW;
Tsung-Yi Huang, Hsinchu, TW;
Ching-Yao Yang, Changhua, TW;
Wen-Yi Liao, Hsinchu, TW;
Hung-Der Su, Pingzhen, TW;
Kuo-Cheng Chang, New Taipei, TW;
RICHTEK TECHNOLOGY CORPORATION, Zhubei, Hsinchu, TW;
Abstract
The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.