Location History:
- Hirakata, JP (1987 - 1996)
- Osaka, JP (1992 - 2000)
- Kyoto, JP (2003 - 2012)
Company Filing History:
Years Active: 1987-2012
Title: Kunitoshi Aono: Innovator in Nonvolatile Storage Technology
Introduction
Kunitoshi Aono is a prominent inventor based in Hirakata, Japan. He has made significant contributions to the field of nonvolatile storage devices, holding a total of 13 patents. His work focuses on enhancing the stability and efficiency of memory technologies.
Latest Patents
One of Aono's latest patents is for a nonvolatile storage device and method for writing into the same. This invention aims to provide a nonvolatile storage device capable of achieving stable operation, which includes variable resistance elements. The device features memory cells arranged at three-dimensional cross-points between word lines and bit lines, with resistance values that change reversibly based on electrical signals. Additionally, he has developed a semiconductor device with varying width electrodes, which involves forming n-channel and p-channel active regions with a silicon gate electrode that has an enlarged width at the boundary between these regions.
Career Highlights
Throughout his career, Kunitoshi Aono has worked with notable companies such as Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and memory devices.
Collaborations
Aono has collaborated with several talented individuals in his field, including Toshiyuki Araki and Masaki Toyokura. These collaborations have contributed to the advancement of innovative technologies in nonvolatile storage.
Conclusion
Kunitoshi Aono's contributions to the field of nonvolatile storage technology highlight his innovative spirit and dedication to advancing memory solutions. His patents reflect a commitment to improving the efficiency and stability of storage devices, making a lasting impact in the industry.