The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Aug. 31, 2000
Masahiro Yasumi, Osaka, JP;
Ichirou Matsuo, Kyoto, JP;
Toshiki Yabu, Toyama, JP;
Mizuki Segawa, Osaka, JP;
Kunitoshi Aono, Kyoto, JP;
Akihiko Ohtani, Osaka, JP;
Takayuki Minemaru, Osaka, JP;
Tadashi Fukumoto, Hyogo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An n-channel active region, a p-channel active region and an isolation insulating film are formed, and a silicon film is deposited via a gate insulating film. After introducing n-type impurities into the n-channel region and p-type impurities into the p-channel region, a silicon gate electrode is formed in such a manner that its width is enlarged only in the boundary portion between the n-channel region and the p-channel region. After forming a side wall insulating film, an n-channel diffusion layer and a p-channel diffusion layer, a metal silicide layer is formed in a self-aligned manner on the surfaces of the silicon gate electrode, the n-channel diffusion layer and the p-channel diffusion layer.