The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Dec. 16, 2009
Takeshi Takagi, Kyoto, JP;
Shunsaku Muraoka, Osaka, JP;
Ryotaro Azuma, Osaka, JP;
Kunitoshi Aono, Kyoto, JP;
Takeshi Takagi, Kyoto, JP;
Shunsaku Muraoka, Osaka, JP;
Ryotaro Azuma, Osaka, JP;
Kunitoshi Aono, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
To provide a nonvolatile storage device () which is capable of achieving stable operation and includes variable resistance elements. The nonvolatile storage device () includes: memory cells (M, M, . . .) each of which is provided at three-dimensional cross-points between word lines (WL, WL, . . .) and bit lines (BL, BL, . . .) and having a resistance value that reversibly changes based on an electrical signal; a row selection circuit-and-driver () provided with transistors () each of which applies a predetermined voltage to a corresponding one of the word lines (WL, WL, . . .); a column selection circuit-and-driver () provided with transistors () each of which applies a predetermined voltage to a corresponding one of the bit lines (BL, BL, . . .); and a substrate bias circuit () which applies a forward bias voltage to a substrate of such transistors (and).