Keelung, Taiwan

Kun-Shin Huang

This inventor holds 1 USPTO granted patent. Top assignee: Nan Ya Technology Corporation. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kun-Shin Huang. Retrieved from https://idiyas.com/inventor/kun-shin-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Kun-Shin Huang: Innovator in Integrated Circuit Reworking Methods

Introduction

Kun-Shin Huang is a notable inventor based in Keeling, Taiwan. He has made significant contributions to the field of integrated circuit technology. His innovative methods have paved the way for advancements in electronic device manufacturing.

Latest Patents

Kun-Shin Huang holds a patent for a "Method of reworking layers over substrate." This patent describes a method for reworking an integrated circuit device. The process involves a substrate with a dielectric layer, a barrier layer, a conductive layer, and an anti-reflective layer. The method includes removing the anti-reflection layer through dry etching, the conductive layer via wet etching, and the barrier layer using chemical mechanical polishing.

Career Highlights

Kun-Shin Huang is associated with Nan Ya Technology Corporation, where he applies his expertise in integrated circuit technology. His work has been instrumental in enhancing the efficiency and reliability of electronic devices.

Collaborations

Some of his coworkers include Min-Yi Hsu and Hsin-Jung Ho. Their collaborative efforts contribute to the innovative environment at Nan Ya Technology Corporation.

Conclusion

Kun-Shin Huang's contributions to integrated circuit reworking methods highlight his role as a key innovator in the field. His patent reflects a commitment to advancing technology in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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