Company Filing History:
Years Active: 2017
Title: Kun-Hsuan Tien: Innovator in Power MOSFET Technology
Introduction
Kun-Hsuan Tien is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of power MOSFETs. His innovative work has led to advancements that enhance the efficiency and performance of electronic devices.
Latest Patents
Kun-Hsuan Tien holds a patent for a "Quasi-vertical power MOSFET and methods of forming the same." This invention involves a MOSFET that includes a semiconductor substrate with a body region of a first conductivity type and a double diffused drain (DDD) region of a second conductivity type. The design features a gate oxide and a gate electrode, which are strategically positioned to optimize performance. This patent represents a significant advancement in MOSFET technology, with potential applications in various electronic devices.
Career Highlights
Kun-Hsuan Tien is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to collaborate with other talented professionals and contribute to groundbreaking innovations in semiconductor technology.
Collaborations
Some of his notable coworkers include Chi-Chih Chen and Ruey-Hsin Liu. Their collaborative efforts have further propelled advancements in the field, showcasing the importance of teamwork in driving innovation.
Conclusion
Kun-Hsuan Tien's contributions to power MOSFET technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and collaborative work continue to influence the development of efficient electronic devices.