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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9818859 B1

PDFFull Text
Date of Patent:
Nov. 14, 2017

Filed:

Aug. 26, 2011

Quasi-vertical power mosfet and methods of forming the same

Applicants:

Chi-chih Chen, Hsin-Chu, TW;

Kun-hsuan Tien, Tainan, TW;

Ruey-hsin Liu, Hsin-Chu, TW;

Inventors:

Chi-Chih Chen, Hsin-Chu, TW;

Kun-Hsuan Tien, Tainan, TW;

Ruey-Hsin Liu, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Marc Armand

Assistant Examiner:

Quinton Brasfield

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7809 (2013.01); H01L 29/66734 (2013.01); H01L 29/0878 (2013.01); H01L 29/41766 (2013.01); H01L 29/41775 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01);
Abstract

A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.

Find Patent Forward Citations

Chen, Chi-Chih. (2017). Quasi-vertical power mosfet and methods of forming the same (U.S. Patent No. 9818859). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9818859

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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