This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018.
Company Filing History:
Years Active: 2018
Title: Kun-Dian She: Innovator in Semiconductor Technology
Introduction
Kun-Dian She is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of advanced transistor structures. His innovative methods have the potential to enhance the performance and efficiency of electronic devices.
Latest Patents
Kun-Dian She holds a patent for a "Method for fabricating a fin field effect transistor and a shallow trench isolation." This patent describes a method for creating a shallow trench isolation (STI) structure. The process involves introducing a silane-based precursor and a nitrogen-based precursor under specific pressure and temperature conditions to deposit a flowable dielectric layer in a substrate trench. The method further includes treating the dielectric layer with ozone and oxygen gases to optimize its properties. This innovative approach is crucial for the development of FinFET technology.
Career Highlights
Kun-Dian She is associated with Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work at this esteemed company has allowed him to collaborate with other talented professionals in the field.
Collaborations
Some of his notable coworkers include Yun-Wen Chu and Lichia Yang. Their collective expertise contributes to the advancement of semiconductor technologies and innovations.
Conclusion
Kun-Dian She is a key figure in semiconductor innovation, with a focus on improving transistor fabrication methods. His contributions are vital for the ongoing evolution of electronic devices.