Seoul, South Korea

Kui-Han Ko


Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2020-2024

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5 patents (USPTO):Explore Patents

Title: Innovations of Kui-Han Ko in Nonvolatile Memory Technology

Introduction

Kui-Han Ko is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 5 patents. His work focuses on enhancing memory technology, which is crucial for modern electronic devices.

Latest Patents

One of Kui-Han Ko's latest patents is a nonvolatile memory device with intermediate switching transistors and a programming method. This invention aims to improve the programming process in nonvolatile memory devices. The device includes a cell region with first metal pads and a peripheral region with second metal pads, which are vertically connected. The memory block consists of multiple sub-blocks arranged vertically, each containing cell strings with memory cells connected in series. The innovative aspect of this patent is the inclusion of intermediate switching transistors located at the boundary between adjacent sub-blocks. These transistors are selectively activated based on a program address during the programming operation, allowing for more efficient memory management.

Career Highlights

Kui-Han Ko is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of memory technology innovations. His contributions have not only advanced the company's product offerings but have also influenced the broader industry.

Collaborations

Some of Kui-Han Ko's notable coworkers include Bong-Soon Lim and Il-Han Park. Their collaborative efforts have further enhanced the development of innovative memory solutions.

Conclusion

Kui-Han Ko's work in nonvolatile memory technology exemplifies the importance of innovation in the electronics industry. His patents reflect a commitment to advancing memory device capabilities, which are essential for the future of technology.

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