Company Filing History:
1 out of 832,812 Years Active: 2016
Title: Innovations of Kuang-Yu Yang
Introduction
Kuang-Yu Yang is a notable inventor based in Zhunan, Taiwan. He has made significant contributions to the field of thin film transistor devices, particularly through his innovative patent.
Latest Patents
Yang holds a patent titled "Process for forming gate of thin film transistor devices." This patent describes a process for creating a T-gate that boasts enhanced mechanical strength and a reduced gate length, which is essential for high electron mobility transistors. The process involves several steps, including the formation of a stem portion cavity with rounded top edges to improve mechanical strength, the creation of an insoluble diffused feature shrinking layer to minimize gate length, and the execution of a thermal flow process to further decrease the gate length. Additionally, it includes the formation of a head portion cavity with negative side wall slopes to facilitate the lift-off of gate metal layers.
Career Highlights
Throughout his career, Kuang-Yu Yang has demonstrated a commitment to advancing technology in the semiconductor industry. His innovative approaches have positioned him as a key figure in the development of high-performance electronic devices.
Collaborations
Yang has collaborated with notable colleagues, including Cindy Xing Qiu and Ishiang Shih, contributing to various projects that enhance the capabilities of thin film transistors.
Conclusion
Kuang-Yu Yang's work in the field of thin film transistors exemplifies the impact of innovative processes on technology. His patent reflects a significant advancement in the design and functionality of electronic devices.