Other

Kuang-Yu Yang

Cindy Xing Qiu

Yi-Chi Shih

Chunong Qiu

Ishiang Shih

Julia Qiu

Andy Shih

Lu Han

A process for forming a T-gate with enhanced mechanical strength and a reduced gate length for high electron mobility transistors is provided. The process includes the steps of forming a stem portion cavity with rounded top edges to enhance the mechanical strength, creating an insoluble diffused feature shrinking layer to reduce the gate length, carrying out a thermal flow process to further reduce the gate length, and forming a head portion cavity with negative side wall slopes to facilitate lift-off of gate metal layers.

Process for forming gate of thin film transistor devices

Growing community of inventors

Zhunan, Taiwan

Kuang-Yu Yang