The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
May. 15, 2015
Cindy X. Qiu, Brossard, CA;
Kuang-yu Yang, Zhunan, TW;
Ishiang Shih, Brossard, CA;
LU Han, Brossard, CA;
Chunong Qiu, Brossard, CA;
Julia Qiu, Brossard, CA;
Andy Shih, Brossard, CA;
Yi-chi Shih, Los Angeles, CA (US);
Cindy X. Qiu, Brossard, CA;
Kuang-Yu Yang, Zhunan, TW;
Ishiang Shih, Brossard, CA;
Lu Han, Brossard, CA;
Chunong Qiu, Brossard, CA;
Julia Qiu, Brossard, CA;
Andy Shih, Brossard, CA;
Yi-Chi Shih, Los Angeles, CA (US);
Other;
Abstract
A process for forming a T-gate with enhanced mechanical strength and a reduced gate length for high electron mobility transistors is provided. The process includes the steps of forming a stem portion cavity with rounded top edges to enhance the mechanical strength, creating an insoluble diffused feature shrinking layer to reduce the gate length, carrying out a thermal flow process to further reduce the gate length, and forming a head portion cavity with negative side wall slopes to facilitate lift-off of gate metal layers.