Kuang Sheng

Title: Kuang Sheng: Innovator in High Voltage Thin Film Transistors

Introduction

Kuang Sheng is a notable inventor based in Edison, NJ (US). He has made significant contributions to the field of electronics, particularly in the development of high voltage thin film transistors. His innovative work has the potential to impact various applications in the photovoltaic industry.

Latest Patents

Kuang Sheng holds a patent for a Magnesium zinc oxide-based high voltage thin film transistor. This device, known as the Magnesium Zinc Oxide (MZO)-based high voltage thin film transistor (MZO-HVTFT), is constructed on a transparent substrate, such as glass. The design features a circular drain and ring-shaped source and gate, which help to reduce non-uniformity in the electric field distribution. Controlled magnesium doping in the channel, along with modulated magnesium doping in a transition layer at the channel-gate dielectric interface, enhances the device's operating stability and increases its blocking voltage capability to over 600V. The MZO HVTFT is particularly useful for fabricating micro-inverters in photovoltaic systems on glass and for creating self-powered smart glass.

Career Highlights

Kuang Sheng is affiliated with Rutgers, the State University of New Jersey, where he continues to advance his research and development efforts. His work is characterized by a commitment to innovation and excellence in the field of electronics.

Collaborations

Some of his notable coworkers include Yicheng Lu and Wen-Chiang Hong, who contribute to the collaborative research environment at Rutgers.

Conclusion

Kuang Sheng's contributions to high voltage thin film transistors exemplify the innovative spirit of modern inventors. His work not only advances technology but also opens new avenues for applications in renewable energy and smart technologies.