The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Aug. 18, 2017
Rutgers, the State University of New Jersey, New Brunswick, NJ (US);
Yicheng Lu, East Brunswick, NJ (US);
Wen-Chiang Hong, Tigard, OR (US);
Chieh-Jen Ku, Edison, NJ (US);
Kuang Sheng, Edison, NJ (US);
Rui Li, Piscataway, NJ (US);
RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY, New Brunswick, NJ (US);
Abstract
Magnesium Zinc Oxide (MZO)—based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.