Rui Li

Title: Innovations by Inventor Rui Li

Introduction

Rui Li is an accomplished inventor based in Piscataway, NJ (US). He has made significant contributions to the field of thin film transistors, particularly with his innovative work on magnesium zinc oxide-based devices. His expertise and research have led to advancements that hold promise for various applications in technology.

Latest Patents

Rui Li holds a patent for a Magnesium Zinc Oxide (MZO)-based high voltage thin film transistor (MZO-HVTFT). This device is constructed on a transparent substrate, such as glass, and features a circular drain along with a ring-shaped source and gate. These design elements are intended to reduce non-uniformity in the electric field distribution. The controlled magnesium doping in the channel, along with modulated magnesium doping in a transition layer at the channel-gate dielectric interface, enhances the device's operating stability. Furthermore, it increases its blocking voltage capability to over 600V. The MZO HVTFT is particularly useful for fabricating micro-inverters in photovoltaic systems on glass and for developing self-powered smart glass.

Career Highlights

Rui Li is affiliated with Rutgers, the State University of New Jersey, where he continues to engage in groundbreaking research. His work has not only contributed to the academic community but has also paved the way for practical applications in the field of electronics.

Collaborations

Rui Li has collaborated with notable colleagues, including Yicheng Lu and Wen-Chiang Hong. Their combined efforts have further advanced the research and development of innovative technologies.

Conclusion

Rui Li's contributions to the field of thin film transistors exemplify the impact of innovative research on technology. His patent for the magnesium zinc oxide-based high voltage thin film transistor showcases his commitment to advancing electronic devices.