San Jose, CA, United States of America

Kuan-Yu James Lin

This inventor holds 2 USPTO granted patents. Top assignee: Sun Microsystems, Inc.. Active years: 2006-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuan-Yu James Lin. Retrieved from https://idiyas.com/inventor/kuan-yu-james-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2006-2010

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2 patents (USPTO):Explore Patents

Title: Kuan-Yu James Lin: Innovator in SRAM Technology

Introduction

Kuan-Yu James Lin is a notable inventor based in San Jose, CA. He has made significant contributions to the field of semiconductor technology, particularly in SRAM memory systems. With a total of 2 patents, his work focuses on enhancing the efficiency and functionality of memory circuits.

Latest Patents

One of his latest patents is titled "Read assist circuit of SRAM with low standby current." This invention presents a SRAM memory that incorporates a read assist circuit utilizing bitline voltage level switches. These switches are connected to both low and high power supplies, allowing for different operational states: write, read, and standby. The design selectively provides power to the bitlines based on the operation being performed, optimizing energy consumption during various states.

Another significant patent is "Graphical system and automated pattern generator for testing arrays." This method involves generating a test vector pattern for an array by determining test failures, defining the type of pattern needed through a graphical user interface, and subsequently testing the array with the generated pattern. This innovation streamlines the testing process for semiconductor arrays, enhancing reliability and efficiency.

Career Highlights

Kuan-Yu James Lin is currently employed at Sun Microsystems, Inc., where he continues to develop innovative solutions in the field of memory technology. His work has been instrumental in advancing the capabilities of SRAM systems, contributing to the overall progress in semiconductor design.

Collaborations

He collaborates with talented individuals such as Heechoul Park and Wilson Chin, who share his passion for innovation in technology. Their combined expertise fosters a creative environment that leads to groundbreaking advancements in their field.

Conclusion

Kuan-Yu James Lin is a distinguished inventor whose contributions to SRAM technology have made a significant impact in the semiconductor industry. His innovative patents reflect his commitment to enhancing memory systems and improving energy efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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