Kuan-Yang Liao

Title: Innovations of Kuan-Yang Liao

Introduction

Kuan-Yang Liao is a notable inventor based in Laguna Niguel, CA. He has made significant contributions to the field of integrated circuit technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Liao's latest patents is titled "Self-aligned ion implanted transition metal contact diffusion barrier." This invention describes a method for forming a contact diffusion barrier in thin geometry integrated circuit devices. The process involves implanting a second material into a low resistivity material that overlays the semiconductor, creating a composite transition metal diffusion barrier. Another significant patent is the "Self-aligned bipolar transistor with very thin dielectric layer." This innovation modifies the self-aligned double poly fabrication process for bipolar transistors by using a thin sacrificial dielectric film to protect the wafer surface during the etching of an emitter opening.

Career Highlights

Kuan-Yang Liao has worked at Hughes Aircraft Company, where he has been instrumental in advancing semiconductor technologies. His expertise in the field has led to the development of innovative solutions that improve device performance.

Collaborations

Liao has collaborated with several talented individuals, including Maw-Rong Chin and Gary B Warren. These partnerships have contributed to the successful development of his patents and innovations.

Conclusion

Kuan-Yang Liao's contributions to semiconductor technology through his patents demonstrate his commitment to innovation in the field. His work continues to influence the development of advanced integrated circuits.