The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1989
Filed:
Jun. 30, 1988
Applicant:
Inventors:
Yu C Chow, Irvine, CA (US);
Kuan-Yang Liao, Irvine, CA (US);
Maw-Rong Chin, Huntington Beach, CA (US);
Assignee:
Hughes Aircraft Company, Los Angeles, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 38 ; 156653 ; 156657 ; 156662 ; 427124 ; 4272554 ; 427252 ; 437 41 ; 437200 ;
Abstract
A process for forming a diffusion barrier on exposed silicon and polysilicon contacts of an integrated circuit including the step of chemically vapor depositing a layer of tungsten in a self-aligned manner on the exposed contact areas. The layer of tungsten is plasma nitridated to form a tungsten nitride layer and to partially form a tungsten silicide layer adjacent the contact areas. The formation of the tungsten silicide layer is completed by thermal annealing.